A monolithically integrated microwave frequency high power amplifier device comprises a plurality of transistors connected in a load modulation configuration wherein the number of the transistors that is operational depends on the drive level. The transistors have each a finger type layout, where fingers from different ones of the transistors are interleaved. The sources of the plurality of transistors are typically interconnected, whereas the gates of the transistors have separate connections for connection to separate package leads. Similarly, the drains of the transistors have separate connections for connection to separate package leads. Advantageously, an LC-based passive network performs a power combining operation of the amplifier device.
CROSS-REFERENCE TO RELATED APPLICATION
This application is a continuation of copending International Application No. PCT/EP2006/000738, filed Jan. 27, 2006, which designated the United States.
