The invention also relates to an apparatus and method for selectively providing a silicide coating over the transistor gates of a CMOS imager to improve the speed of the transistor gates. The method further includes an apparatus and method for forming a self aligned photo shield over the CMOS imager.
CROSS REFERENCE TO RELATED APPLICATIONS
The present application is a continuation application of Ser. No. 10/617,706, filed Jul. 14, 2003, now U.S. Pat. No. 6,930,337, which is a continuation of Ser. No. 09/777,890, filed Feb. 7, 2001, now U.S. Pat. No. 6,611,013, which is a divisional of Ser. No. 09/374,990, filed Aug. 16, 1999, now U.S. Pat. No. 6,333,205, the disclosures of which are incorporated herein by reference in their entireties.
