Power amplifier circuits which constitute an RF power module used for a digital device capable of handling high frequency signals in two frequency bands are disposed over the same IC chip. The power amplifier circuits are disposed around the IC chip, and a secondary circuit is disposed between the power amplifier circuits. Thus, the power amplifier circuits are provided within the same IC chip to enable a size reduction. Further, the distance between the power amplifier circuits is ensured even if the power amplifier circuits are provided within the same IC chip. It is therefore possible to suppress the coupling between the power amplifier circuits and restrain crosstalk between the power amplifier circuits.
CROSS-REFERENCE TO RELATED APPLICATION
This application is a Divisional application of U.S. application Ser. No. 10/890,281 filed Jul. 14, 2004 now U.S. Pat. No. 7,116,175. Priority is claimed based on U.S. application Ser. No. 10/890,281 filed Jul. 14, 2004, which claims the priority of Japanese Patent Application No. 2003-290136 filed on Aug. 8, 2003, all of which is incorporated by reference.
A radio frequency (RF) module provides first and second power amplifiers configured to produce first and second amplified RF signals at first and second output RF terminals, respectively; and first and second arrays of pads positioned opposite each other, the first array including the first output RF terminal and the second array including the second output RF terminal. The module also provides two reserve terminals that can be connected to capacitors, inductors, sensors for RF linearity, or can be left unconnected.
