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Enhanced spin-valve sensor with engineered overlayer formed on a free layer
   
Document Number
US Patent 7352542
Issued Date
April 1, 2008
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Abstract
A GMR sensor is disclosed for sensing magnetically recorded information on a data storage medium. The sensor includes a ferromagnetic free layer and a ferromagnetic pinned layer sandwiching an electrically conductive spacer layer. An engineered overlayer is formed on the free layer to decrease free layer magnetic thickness without reducing physical thickness.
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Number of Claims:
27
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Published
April 1, 2008
Application Number
10/898,816
Filed
July 26, 2004
US Classification
Int'l Classification
G11B   5/39   (20060101)  
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Attorney/Law Firm
Parent Case
CROSS REFERENCE TO RELATED APPLICATIONS The present application is a divisional of U.S. application Ser. No. 10/298,340, filed on Nov. 18, 2002 now U.S. Pat. No. 7,007,373, and entitled "Enhanced Spin-Valve Sensor With Engineered Overlayer."
USPTO Field of Search
360/324.12  
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