Briefly, in accordance with an embodiment of the invention, a lateral phase change memory and a method to manufacture a phase change memory is provided. The method may include forming a conductor material over a substrate and patterning the conductor material to form two electrodes from the conductor material, wherein the two electrodes are separated by a sub-lithographic distance. The method may further include forming a phase change material between the two electrodes.
CROSS-REFERENCE TO RELATED APPLICATIONS
This application is a continuation of U.S. patent application Ser. No. 11/042,522, filed on Jan. 25, 2005, now Pat. No. 7,119,355, which is a divisional of U.S. patent application Ser. No. 10/319,204, filed on Dec. 13, 2002, which issued as U.S. Pat. No. 6,867,425.
