A resin material having a small relative dielectric constant is used as a layer insulation film 114. The resin material has a flat surface. A black matrix or masking film for thin film transistors is formed thereon using a metal material. Such a configuration prevents the problem of a capacity generated between the masking film and a thin film transistor.
CROSS-REFERENCE TO RELATED APPLICATIONS
This application is a continuation of U.S. application Ser. No. 10/137,040, filed Apr. 30, 2002, now U.S. Pat. No. 6,867,434 now allowed, which is a continuation of U.S. application Ser. No. 09/414,906, filed Oct. 8, 1999, now U.S. Pat. No. 6,800,875 now allowed, which is a continuation of U.S. application Ser. No. 09/415,019, filed Oct. 7, 1999, now U.S. Pat. No. 6,239,470, which is a continuation of U.S. application Ser. No. 09/360,341, Jul. 22, 1999 now U.S. Pat. No. 6,169,293, which is a continuation of U.S. application Ser. No. 08/751,338, now U.S. Pat. No. 5,952,708, which claims the benefit of a foreign priority application filed in Japan as Serial No. 07-323674 on Nov. 17, 1995. This application claims priority to each of these prior applications, and the disclosures of the prior applications are considered part of (and are incorporated by reference in) the disclosure of this application.
Priority Data
Nov 17, 1995 [JP] 7-323674
USPTO Field of Search
257/59
257/72
257/350
257/E27.132
Related Patents
7554265 - Display device - Owned by Semiconductor Energy Laboratory Co., Ltd. (Atsugi-shi, Kanagawa-ken,JP)
An active matrix display device which can easily improve the viewing angle characteristics. In the active matrix display device where light is emitted in the direction of a substrate over which thin film transistors are formed, when focusing on the multiple interference caused by the light emitted from a light-emitting element, which is reflected on the film used for forming the thin film transistors, effect on the multiple interference can be drastically reduced by forming the reflecting film to have the substantial optical thickness of .lamda./2, without losing the function of the thin film transistor.
