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Nitride light emitting device and manufacturing method thereof
 
   
Document Number
US Patent 7372081
Issued Date
May 13, 2008
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Inventors
Song; June-o (Gwangju-si,KR)
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Abstract
A nitride LED having a laminated structure in which a substrate, a n-type cladding layer, an active layer, a p-type cladding layer, and a multi-ohmic contact layer are sequentially stacked, and a manufacturing method thereof, are provided. In the nitride LED, the multi-ohmic contact layer includes multiple layers of a first transparent film layer/silver/second transparent film layer. In the nitride LED and a manufacturing method thereof, ohmic contact characteristics with respect to the p-type cladding layer are enhanced, thereby exhibiting a good current-voltage characteristic. Also, since the transparent electrodes have a high light transmitting property, the light emitting efficiency of the device is increased.
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Number of Claims:
8
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Owner
Samsung Electronics Co., Ltd. (Suwon-Si, Gyeonggi-Do,KR)
Published
May 13, 2008
Application Number
11/002,795
Filed
December 3, 2004
US Classification
257/99   257/E33.028 257/E33.064
Int'l Classification
H01L   33/00   (20060101)  
Assistant Examiner
Attorney/Law Firm
Priority Data
Dec 24, 2003 [KR] 10-2003-0095957
USPTO Field of Search
257/615   257/E33.062   257/E33.063   257/E33.064  
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