Browse by:
Inventor
Owner/Assignee
Attorney/Agent/Firm
Examiner
Advanced Patent Search
Sign In
or
Register Free
High-voltage generation circuits and nonvolatile semiconductor memory device with improved high-voltage efficiency and methods of operating
Page 1
Page 2
Page 3
Page 4
Page 5
Page 6
Document Number
US Patent 7372308
Issued Date
May 13, 2008
Link
Inventors
Park; Dae-Sik
(Hwasung-si,KR)
show on map
Lee; Jin-Yub
(Seoul,KR)
show on map
Map
Abstract
A power-voltage driver circuit includes a first MOS transistor configured to turn a second MOS transistor off when a high-voltage generator provides a high voltage output. Related methods are also disclosed.
Patent Report
Tags:
highvoltage
generation
circuits
nonvolatile
semiconductor
memory
device
improved
efficiency
methods
operating
[x]
Add
Description:
Amusing 0%
Clever 0%
Complex 0%
Efficient 0%
Historic 0%
Important 0%
Innovative 0%
Interesting 0%
Practical 0%
Simple 0%
[x]
Amusing
Clever
Complex
Efficient
Historic
Important
Innovative
Interesting
Practical
Simple
Submit
Number of Claims:
9
Comments:
no comments yet
[x]
Add
Patent Tools
Owner
Samsung Electronics Co., Ltd.
(Gyeonggi-do,KR)
Published
May 13, 2008
Application Number
11/485,214
Filed
July 12, 2006
US Classification
327/108
327/430
Int'l Classification
H03K 3/00 (20060101)
Examiner
Wells; Kenneth B.
Attorney/Law Firm
Myers Bigel Sibley & Sajovec, P.A.
Priority Data
Oct 18, 2005 [KR] 10-2005-0097841
USPTO Field of Search
327/108 327/112 327/430
Related Patents
Claims
Description
Prev:
Efficient current monitoring for DC-DC
Next:
Reset circuit
About
|
FAQs
|
Terms & Disclaimer
|
Link to Us
|
Contact Us
© 2009 - WikiPatents, Inc.
Not affiliated with Wikipedia.
