A magnetic cell includes: a first ferromagnetic layer whose magnetization is substantially fixed in a first direction; a second ferromagnetic layer whose magnetization is substantially fixed in a second direction opposite to the first direction; a third ferromagnetic layer provided between the first and the second ferromagnetic layers, a direction of magnetization of the third ferromagnetic layer being variable; a first intermediate layer provided between the first and the third ferromagnetic layers; and a second intermediate layer provided between the second and the third ferromagnetic layers. The direction of magnetization of the third ferromagnetic layer can be determined under an influence of spin-polarized electrons upon the third ferromagnetic layer by passing a current between the first and the second ferromagnetic layers.
This application is a continuation application of U.S. application Ser. No. 11/213.865, filed on Aug. 30, 2005 now U.S. Pat. No. 7,126,848, which is a continuation application of U.S. application Ser. No. 10/721,549, filed on Nov. 26, 2003 now U.S. Pat. No. 6,956,766 and is based upon and claims the benefit of priority from the prior Japanese Patent Application No. 2002-342447, filed on Nov. 26, 2002; the entire contents of which are incorporated herein by reference.
A memory device includes a memory element, a first wiring and a second wiring. The memory element includes a memory layer retaining information based on a magnetization state of a magnetic material and a magnetization pinned layer in which a magnetization direction is pinned and which is provided for the memory layer through a non-magnetic layer, in which current flows in a stacking direction to change a magnetization direction of the memory layer. The first wiring supplies current flowing in the stacking direction of the memory element, and the second wiring supplies current to apply a current magnetic field to the memory element. When information is recorded in the memory device, a first pulse current is supplied to the first wiring, a second pulse current is supplied to the second wiring, and the second pulse current falls at least 10 picoseconds after the first pulse current falls.
