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MEMS RF switch integrated process
 
   
Document Number
US Patent 7381583
Issued Date
June 3, 2008
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Abstract
A capacitance coupled, transmission line-fed, radio frequency MEMS switch and its fabrication process using photoresist and other low temperature processing steps are described. The achieved switch is disposed in a low cost dielectric housing free of undesired electrical effects on the switch and on the transmission line(s) coupling the switch to an electrical circuit. The dielectric housing is provided with an array of sealable apertures useful for wet, but hydrofluoric acid-free, removal of switch fabrication employed materials and also useful during processing for controlling the operating atmosphere surrounding the switch--e.g. at a pressure above the high vacuum level for enhanced switch damping during operation. Alternative arrangements for sealing an array of dielectric housing apertures are included. Processing details including plan and profile drawing views, specific equipment and materials identifications, temperatures and times are also disclosed.
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Number of Claims:
17
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Published
June 3, 2008
Application Number
10/901,315
Filed
July 27, 2004
US Classification
438/53   200/181 257/415 257/E21.309
Int'l Classification
H01L   21/00   (20060101)  
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Parent Case
CLAIM OF PRIORITY This application claims the benefit of U.S. Provisional Application No. 60/573,892 filed May 24, 2004. The contents of this provisional application are hereby incorporated by reference herein.
USPTO Field of Search
438/53   257/419   257/E21.309   257/415   200/181   333/105   333/103  
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