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Multilayered phase change memory
 
   
Document Number
US Patent 7381611
Issued Date
June 3, 2008
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Abstract
A phase change layer may switch between more and less conductive states in response to electrical stimulation. The phase change layer may be positioned over a non-switching ovonic material which acts as an electrode, a resistive heater, and an insulating barrier. The phase change layer may be positioned over a non-switching ovonic material which acts as an electrode, a resistive heater, and a thermal barrier.
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Number of Claims:
30
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Owner
Intel Corporation (Santa Clara, CA)
Published
June 3, 2008
Application Number
10/634,130
Filed
August 4, 2003
US Classification
438/238   257/2 257/42 257/E45.002 438/381
Int'l Classification
H01L   21/8234   (20060101)  
Examiner
Attorney/Law Firm
USPTO Field of Search
257/E31.029   257/42  
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