A non-volatile memory device for preventing damage by plasma charges includes a gate electrode formed on a predetermined region of a semiconductor substrate, a source/drain region which is overlapped with the gate electrode and formed in a first well region of the semiconductor substrate, a first metal line coupled to the gate electrode through a first contact plug, a second metal line coupled to the first metal line through a second contact plug so that an external voltage is transferred to the gate electrode, a junction region formed in a second well region separated from the first well region, and a third metal line coupled to the junction region through a third contact plug and coupled to the second metal line through a fourth contact plug.
