The invention provides an imager having a p-n-p photodiode with an ultrashallow junction depth. A p+ junction layer of the photodiode is doped with indium to decrease transient enhanced diffusion effects, minimize fixed pattern noise and fill factor loss.
The present application is a divisional of Application No. 10/681,108, filed Oct. 9, 2003 now U.S. Pat. No. 7,057,220, the entire disclosure of which is incorporated herein by reference.
