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Forming field effect transistors from conductors
   
Document Number
US Patent 7390947
Issued Date
June 24, 2008
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Abstract
A nanotube transistor, such as a carbon nanotube transistor, may be formed with a top gate electrode and a spaced source and drain. Conduction along the transistor from source to drain is controlled by the gate electrode. Underlying the gate electrode are at least two nanotubes. In some embodiments, the substrate may act as a back gate.
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Number of Claims:
4
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Owner
Intel Corporation (Santa Clara, CA)
Published
June 24, 2008
Application Number
11/037,512
Filed
January 18, 2005
US Classification
257/27   257/E21.049 257/E21.27 257/E51.04 977/701 977/938
Int'l Classification
H01L   29/12   (20060101)  
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Attorney/Law Firm
USPTO Field of Search
977/938   977/701   257/E21.27   257/E21.049   257/E51.04  
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