A vapor phase deposition method and apparatus for the application of thin layers and coatings on substrates. The method and apparatus are useful in the fabrication of electronic devices, micro-electromechanical systems (MEMS), Bio-MEMS devices, micro and nano imprinting lithography, and microfluidic devices. The apparatus used to carry out the method provides for the addition of a precise amount of each of the reactants to be consumed in a single reaction step of the coating formation process. The apparatus provides for precise addition of quantities of different combinations of reactants during a single step or when there are a number of different individual steps in the coating formation process. The precise addition of each of the reactants in vapor form is metered into a predetermined set volume at a specified temperature to a specified pressure, to provide a highly accurate amount of reactant.
This application is a divisional of U.S. application Ser. No. 10/759,857, filed Jan. 17, 2004, which has gone abandoned in favor of U.S. application Ser. No. 11/445,706, a continuation application, filed Jun. 2, 2006, which is currently pending. This application is related to Provisional Application Ser. No. 60/482,861, filed Jun. 27, 2003 and entitled: "Method and Apparatus for Mono-Layer Coatings"; and to Provisional Application Ser. No. 60/506,864, filed Sep. 30, 2003, and entitled: "Method of Thin Film Deposition"; and to Provisional Application Ser. No. 60/509,563, filed Oct. 9, 2003, and entitled: "Method of Controlling Monolayer Film Properties". Priority was claimed under these provisional applications in application Ser. No. 10/759,857 and is claimed in the present divisional application.
