US Patent 7413775 - Insulating film material containing an organic silane compound, its production method and semiconductor device

Insulating film material containing an organic silane compound, its production method and semiconductor device

Document Number

US Patent 7413775

Issued Date

August 19, 2008

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Inventors

Hara; Daiji (Yamaguchi-ken,JP)

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Yoshida; Keisuke (Yamaguchi-ken,JP)

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Abstract

An insulating film material formed by chemical vapor deposition, which contains an organic silane compound having such a structure that at least one secondary hydrocarbon group and/or tertiary hydrocarbon group is directly bonded to a silicon atom.

Owner

Tosoh Corporation (Yamaguchi-ken,JP)

Published

August 19, 2008

Application Number

11/347,312

Filed

February 6, 2006

US Classification

427/249.15 428/447 556/453 556/457 556/482

Int'l Classification

C23C 16/18 (20060101)

Examiner

Moore; Margaret G

Attorney/Law Firm

Sughrue Mion, PLLC

Parent Case

This application is a continuation of U.S. Ser. No. 10/354,052, filed Jan. 30, 2003 and now U.S. Pat. No. 7,160,625.

Priority Data

Jan 31, 2002 [JP] 2002-023988 Apr 15, 2002 [JP] 2002-112130 Nov 15, 2002 [JP] 2002-332100 Nov 28, 2002 [JP] 2002-346225 Nov 28, 2002 [JP] 2002-346226

USPTO Field of Search

427/249.15

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