A method of depositing a Group IV metal-containing film on a substrate by conveying one or more of certain Group IV organometallic compounds in a gaseous phase to a deposition reactor containing a substrate and decomposing the one or more Group IV organometallic compounds to form a film of a Group IV metal on the substrate is provided. Such Group IV metal-containing films are particularly useful in the manufacture of electronic devices.
This application claims the benefit of provisional application Ser. No. 60/460,791, filed on Apr. 5, 2003, and provisional application Ser. No. 60/513,476, filed on Oct. 22, 2003.
