August 26, 2008

A Ti film is pattern-formed on a desired portion on a silicon substrate, and a Co film is formed on the substrate so as to cover the Ti film. CNTs are formed only on a portion, under which the Ti film is formed, of the surface of the Co film at approximately 600.degree. C. by a thermal CVD method. The length of the CNT can be controlled by adjusting the thickness of the Ti film.

13

August 26, 2008

11/180,584

July 14, 2005

257/774   257/E51.04 977/743

H01L   23/48   (20060101)   H01L   23/52   (20060101)   H01L   29/40   (20060101)  

Aug 31, 2004 [JP] 2004-252752 Mar 30, 2005 [JP] 2005-098875

257/E51.04