In the manufacture of a semiconductor device, there are provided a method that enables reduction in the number of manufacturing steps thereof and a structure for realizing the method, to thereby realize improvement in yield and reduction in manufacturing cost. Wirings (source wiring, drain wiring, and the like), which are respectively formed in a row direction and a column direction on an element substrate, are formed of the same conductive film. In this case, one of the respective wirings in the row direction and the column direction is discontinuously formed at a portion where the wirings intersect with each other, and an insulating film is formed on the wirings. Thereafter, a connection wiring for connecting discontinuous wirings is formed of the same film as that for forming an electrode provided on the insulating film. As a result, a continuous wiring is formed.
CROSS-REFERENCE TO RELATED APPLICATIONS
This application is a divisional application of U.S. application Ser. No. 10/430,443, filed May 7, 2003, now U.S. Pat. No. 7,115,956, which claims the benefit of a foreign priority application filed in Japan as Ser. No. 2002-140743 on May 15, 2002. This application claims priority to each of these prior applications, and the disclosures of the prior applications are considered part of (and are incorporated by reference in) the disclosure of this application.
