A structure including a grating and a semiconductor nanocrystal layer on the grating, can be a laser. The semiconductor nanocrystal layer can include a plurality of semiconductor nanocrystals including a Group II-VI compound, the nanocrystals being distributed in a metal oxide matrix. The grating can have a periodicity from 200 nm to 500 nm.
CLAIM OF PRIORITY
This application is a divisional of, and claims priority to, U.S. patent application Ser. No. 10/294,742, filed Nov. 15, 2002, and claims priority to U.S. Patent Application Ser. No. 60/331,454, filed on Nov. 16, 2001, each of which is hereby incorporated by reference.
