Described is a method for forming a stackable interconnect. The interconnect is formed by depositing a first contact on a substrate; depositing a seed layer (SL) on the substrate; depositing a metal mask layer (MML) on the SL; depositing a bottom anti-reflection coating (BARC) on the MML; forming a photoresist layer (PR) on the BARC; removing a portion of the PR; etching the BARC and the MML to expose the SL; plating the exposed SL to form a first plated plug; removing the layers to expose the SL; removing an unplated portion of the SL; depositing an inter layer dielectric (ILD) on the interconnect; etching back the ILD to expose the first plated plug; and depositing a second contact on the first plated plug. Using the procedures described above, a second plated plug is then formed on the first plated plug to form the stackable plugged via interconnect.
