A phase change RAM device, has a first metal wiring for a bit line that is separated from a second metal wiring for applying a supply voltage. A method for fabricating the phase change RAM device includes the steps of forming an isolation layer formed so as to define a T-shaped active area in the semiconductor substrate, forming a word line formed on the active area of the semiconductor substrate including the isolation layer, forming source/drain areas formed at both sides of the word line in the active area, forming an insulating interlayer on entire surface of the semiconductor substrate so as to cover the word line, and forming a first tungsten plug in a portion of the insulating interlayer on the source area and a second tungsten plug in a portion of the insulating interlayer on the drain area.
