A solid state imaging device of the present invention comprises a solid state imaging element which includes a plurality of photoelectric conversion elements arranged in a matrix. In the solid state imaging device of the present invention, a pixel mixture unit area includes q pixels (q is a natural number equal to or greater than 2) in the first direction of the solid state imaging element and p pixels (p is a natural number equal to or greater than 2) in the second direction that crosses the first direction. The solid state imaging device includes: means for performing a first-field pixel addition process of adding together electric charges of a plurality of pixels included in the plurality of pixel mixture unit areas and a second-field pixel addition process of adding together the electric charges of the plurality of pixels included in the plurality of pixel mixture unit areas based on a combination of the pixel mixture unit areas which is different from that of the first-field pixel addition process; and means for alternately outputting signals of the electric charges obtained in the first-field pixel addition process and second-field pixel addition process as signals for interlaced scanning.
