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Thin film transistor substrate of horizontal electric field applying type and fabricating method thereof
   
Document Number
US Patent 7489380
Issued Date
February 10, 2009
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Inventors
Lim; Byoung Ho (Gyeongsangbuk-do,KR)
Kim; Jin Ho (Gyeonggi-do,KR)
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Abstract
A thin film transistor substrate comprises a gate line disposed on a substrate, a data line that crosses the gate line with a gate insulating film therebetween to define a pixel area, and a thin film transistor connected to the gate line and the data line. The thin film transistor substrate of a horizontal electric field applying type further comprises a pixel electrode plate connected to the thin film transistor, a protective film disposed to cover the data line, the thin film transistor and the pixel electrode plate on the gate insulating film, and a common electrode disposed at an array area provided with the thin film transistor array and disposed in a mesh shape on the protective film.
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Number of Claims:
21
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Published
February 10, 2009
Application Number
11/645,380
Filed
December 26, 2006
US Classification
349/141  
Int'l Classification
G02F   1/1343   (20060101)  
Examiner
Assistant Examiner
Attorney/Law Firm
Priority Data
Jun 30, 2006 [KR] 10-2006-0060491
USPTO Field of Search
349/141  
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