A transparent electrode for a gallium nitride-based compound semiconductor light-emitting device includes a p-type semiconductor layer (5), a contact metal layer (1) formed by ohmic contact on the p-type semiconductor layer, an current diffusion layer (12) formed on the contact metal layer and having a lower magnitude of resistivity on the plane of the transparent electrode than the contact metal, and a bonding pad (13) formed on the current diffusion layer. The transparent electrode is at an advantage in widening the surface of light emission in the p-type semiconductor layer, decreasing the operation voltage in the forward direction, and enabling the bonding pad to provide excellent adhesive strength.
CROSS REFERENCE TO RELATED APPLICATIONS
This application is an application filed under 35 U.S.C. .sctn.111(a) claiming the benefit pursuant to 35 U.S.C. .sctn.119(e)(1) of the filing dates of Provisional Application No. 60/602,648 filed Aug. 19, 2004 and Japanese Application No. 2004-228968 filed Aug. 5, 2004 pursuant to 35 U.S.C .sctn.111 (b).
