A power semiconductor device has a first base layer of first conductive type, a contact layer of first conductive type formed on a surface of the first base layer, a second base layer of first conductive layer which is formed on the surface of the first base layer at a side opposite to the first contact layer and has an impurity concentration higher than that of the first base layer, a second contact layer of second conductive type formed on the surface of the first base layer or the second base layer, and a junction termination region formed in vicinity of or in contact with outside in a horizontal direction of the second contact layer.
