A memory capable of reducing the memory cell size is provided. This memory includes a plurality of memory cells including diodes, a plurality of bit lines and a first conductive type first impurity region arranged to intersect with the bit lines for functioning as first electrodes of the diodes included in the memory cells and a word line. The first impurity region is divided every bit line group formed by a prescribed number of bit lines along a direction intersecting with the extensional direction of the first impurity region.
