A solid-state imaging device has a photodiode provided in a semiconductor substrate of a first conductivity type. A diffusion layer of a second conductivity type is provided in the semiconductor substrate. A gate wiring layer is provided on the semiconductor substrate between the photodiode and the diffusion layer. A gate insulating film is interposed between the semiconductor substrate and the gate wiring layer. A wiring layer is provided on the semiconductor substrate at a position which faces the gate wiring layer across the photodiode. The wiring layer is adjacent to the photodiode.
