Methods of this invention relate to filling gaps on substrates with a solid dielectric material by forming a flowable film in the gap. The flowable film provides consistent, void-free gap fill. The film is then converted to a solid dielectric material. In this manner gaps on the substrate are filled with a solid dielectric material. According to various embodiments, the methods involve reacting a dielectric precursor with an oxidant to form the dielectric material. In certain embodiments, the dielectric precursor condenses and subsequently reacts with the oxidant to form dielectric material. In certain embodiments, vapor phase reactants react to form a condensed flowable film.
CROSS-REFERENCE TO RELATED APPLICATIONS
This application is a continuation-in-part of and claims priority from the following copending applications: U.S. patent application Ser. No. 10/810,066, filed Mar. 25, 2004, titled "SELECTIVE GAP-FILL PROCESS" (issued as U.S. Pat. No. 7,074,690) and U.S. patent application Ser. No. 11/323,812, filed Dec. 29, 2005, titled "CVD FLOWABLE GAP FILL," both of which are hereby incorporated by reference.
