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Semiconductor device and method of manufacturing the same
   
Document Number
US Patent 7553757
Issued Date
June 30, 2009
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Abstract
An interlayer insulator includes a first interlayer insulator and a second interlayer insulator formed on the first interlayer insulator and having a property of preventing diffusion of copper. A barrier metal film is formed on an inner wall in the wiring trench except an upper end and operative to prevent copper contained in the Cu wiring from diffusing into the interlayer insulator. The Cu wiring is brought into contact with the second interlayer insulator at the upper end and covered with the barrier metal film at a lower portion below the upper end.
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Number of Claims:
13
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Published
June 30, 2009
Application Number
11/702,135
Filed
February 5, 2007
US Classification
438/627   257/760 257/762 257/774 257/E21.171 257/E21.376 257/E21.593 438/637 438/653 438/674
Int'l Classification
H01L   21/20   (20060101)  
Priority Data
Feb 06, 2006 [JP] 2006-028053
USPTO Field of Search
438/639   438/627   438/628   438/629   438/630   438/631   438/632   438/633   438/634   438/635   438/636   438/637   438/653   257/760   257/762   257/774   257/751   257/752   257/753   257/754   257/755   257/756   257/757   257/758   257/759   257/E21.376   257/171   257/593  
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