or
Bookmark and Share
Active matrix substrate and its manufacturing method
   
Document Number
US Patent 7554119
Issued Date
June 30, 2009
Link
Inventors
Map
Abstract
An active matrix substrate with a high aperture ratio is provided, which is capable of preventing electrical short circuits between pixel electrodes and auxiliary capacitive electrodes. Gate lines and auxiliary capacitive electrodes are formed on an insulated substrate. The auxiliary capacitive electrodes have holes formed therethrough. To cover the gate lines and the auxiliary capacitive electrodes, a first interlayer insulating film is formed, on which source lines, a semiconductor layer, and drain electrodes are formed. Then, a second interlayer insulating film is formed to cover all those layers. In the second interlayer insulating film, contact holes are formed to reach the drain electrodes in areas corresponding to the areas of the holes. Pixel electrodes formed on the second interlayer insulating film are connected to the drain electrodes through the contact
Tags:
Description:
Amusing 0%
Clever 0%
Complex 0%
Efficient 0%
Historic 0%
Important 0%
Innovative 0%
Interesting 0%
Practical 0%
Simple 0%
Number of Claims:
8
Comments:
no comments yet
Owner
Mitsubishi Denki Kabushiki Kaisha (Chiyoda-Ku, Tokyo,JP)
Published
June 30, 2009
Application Number
11/274,281
Filed
November 16, 2005
US Classification
257/72   257/59
Int'l Classification
H01L   27/14   (20060101)   H01L   29/04   (20060101)   H01L   29/15   (20060101)   H01L   31/036   (20060101)  
Assistant Examiner
Attorney/Law Firm
Priority Data
Jan 31, 2005 [JP] 2005-022540
USPTO Field of Search
257/59   257/72  
Related Patents
Claims
Description
About| FAQs| Terms & Disclaimer| Link to Us| Contact Us