A metal-insulator-metal (MIM) capacitor is provided. The bottom electrode of the MIM capacitor is electrically connected to a connection node. The connection node may be, for example, a contact formed in an interlayer dielectric, a polysilicon connection node, a doped polysilicon or silicon region, or the like. A contact provides an electrical connection between the connection node and components formed above the connection node. A second contact provides an electrical connection to the top electrode.
This application is a divisional of patent application Ser. No. 10/811,409, entitled "Metal-Insulator-Metal Capacitors," filed Mar. 26, 2004, now U.S. Pat. No. 7,195,970 which application is incorporated herein by reference.
