A low voltage amplifier having a class-AB control circuit which generates minimal or no surge current when the output of the amplifier clips to ground or the negative rail. The amplifier includes an input stage, a summing circuit, a class-AB control circuit and an output stage. The input stage connects to a first current source and couples to receive a pair of differential input signals to generate intermediate signals that are summed together using the summing circuit. A second current source supplies the summing circuit with current. The class-AB control circuit receives the summed signals from the summing circuit to provide control for the output stage which generates the amplifier result at the output of the amplifier which delivers current to drive an external load. Specifically, the class-AB control circuit is improved by the addition of a PMOS device connected in such a way to cut off the DC current path that is generated during the output stage clipping condition by a diode connected PMOS device and a NMOS sensing device both located near the output of the class-AB control circuit. Thereby, the additional PMOS device minimizes the surge current generated by the NMOS sensing device when the output of the amplifier clips to ground or the negative rail.
A voltage-clamping device used in an operational amplifier is provided. The operational amplifier comprises a first transistor. The cross-voltage between the gate and the source of the first transistor is near to a specific voltage and the cross-voltage between the drain and the source of the first transistor is not equal to zero, so as to generate a big substrate current. The voltage-clamping device comprises a second transistor whose source and gate are respectively coupled to the drain of the first transistor and used for receiving a bias signal, so that the second transistor is biased in saturation region, and the voltage at the source of the second transistor is made equal to the difference between the bias signal and the threshold voltage of the second transistor. Thus, the cross-voltage between the drain and the source of the first transistor is reduced and the substrate current is reduced accordingly.
