The present invention provides a solid-state image sensing device that can reduce at least the number of pixels arranged in the horizontal direction and can output high quality picture signals at high speed without generating moire or alias. The solid-state image sensing device includes vertical transfer parts 3 in which signal charges read out from photoelectric conversion parts 2 arranged bidimensionally are transferred in the vertical direction stage by stage, a horizontal transfer part 4 in which signal charges received from the vertical transfer parts 3 are transferred in the horizontal direction, and a control unit that controls transfer operations of the vertical transfer parts 3 and horizontal transfer part 4, wherein vertical last stages of the vertical transfer parts 3 have transfer electrodes formed to have identical configurations repeated every 2n+1 (n denotes an integer of 1 or higher) columns, and vertical last stages of columns other than one column among the 2n+1 columns or all vertical stages are provided with transfer electrodes that are independent of those of the other vertical last stages.
