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Semiconductor device and fabrication method thereof
   
Document Number
US Patent 7569854
Issued Date
August 4, 2009
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Abstract
A p channel TFT of a driving circuit has a single drain structure and its n channel TFT, an LDD structure. A pixel TFT has the LDD structure. A pixel electrode disposed in a pixel unit is connected to the pixel TFT through a hole bored in at least a protective insulation film formed of an inorganic insulating material and formed above a gate electrode of the pixel TFT, and in an inter-layer insulation film disposed on the insulation film in close contact therewith. These process steps use 6 to 8 photo-masks.
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Number of Claims:
15
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Published
August 4, 2009
Application Number
10/871,621
Filed
June 18, 2004
US Classification
257/59   257/72 257/E29.278
Int'l Classification
H01L   29/04   (20060101)  
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Assistant Examiner
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Parent Case
This application is a divisional of U.S. application Ser. No. 09/610,217, filed on Jul. 5, 2000 now U.S. Pat. No. 6,777,254.
Priority Data
Jul 06, 1999 [JP] 11-191093
USPTO Field of Search
257/59  
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