or
Bookmark and Share
Method, apparatus, and system for low temperature deposition and irradiation annealing of thin film capacitor
   
Document Number
US Patent 7572709
Issued Date
August 11, 2009
Link
Inventors
Map
Abstract
Some embodiments of the invention include thin film capacitors formed in a package substrate of an integrated circuit package. At least one of the thin film capacitors includes a first electrode layer, a second electrode layer, and a dielectric layer between the first and second electrode layers. Each of the first and second electrode layers and the dielectric layer is formed individually and directly on the package substrate. Other embodiments are described and claimed.
Tags:
Description:
Amusing 0%
Clever 0%
Complex 0%
Efficient 0%
Historic 0%
Important 0%
Innovative 0%
Interesting 0%
Practical 0%
Simple 0%
Number of Claims:
23
Comments:
no comments yet
Owner
Intel Corporation (Santa Clara, CA)
Published
August 11, 2009
Application Number
11/427,532
Filed
June 29, 2006
US Classification
438/381   257/E21.008 257/E21.019 438/238 438/239 438/778
Int'l Classification
H01L   21/20   (20060101)  
Assistant Examiner
USPTO Field of Search
438/171   438/190   438/329   257/E21.016  
Related Patents
Claims
Description
About| FAQs| Terms & Disclaimer| Link to Us| Contact Us