A growth plane of substrate 1 is processed to have a concavo-convex surface. The bottom of the concave part may be masked. When a crystal is grown by vapor phase growth using this substrate, an ingredient gas does not sufficiently reach the inside of a concave part 12, and therefore, a crystal growth occurs only from an upper part of a convex part 11. As shown in FIG. 1(b), therefore, a crystal unit 20 occurs when the crystal growth is started, and as the crystal growth proceeds, films grown in the lateral direction from the upper part of the convex part 11 as a starting point are connected to cover the concavo-convex surface of the substrate 1, leaving a cavity 13 in the concave part, as shown in FIG. 1(c), thereby giving a crystal layer 2, whereby the semiconductor base of the present invention is obtained. In this case, the part grown in the lateral direction, or the upper part of the concave part 12 has a low dislocation region and the crystal layer prepared has high quality. The manufacturing method of the semiconductor crystal of the present invention divides this semiconductor base into the substrate 1 and the crystal layer 2 at the cavity part thereof to give a semiconductor crystal.
CROSS-REFERENCE TO RELATED APPLICATIONS
This patent application is a continuation of U.S. patent application Ser. No. 10/842,777, filed on May 11, 2004, which is a divisional of U.S. patent application Ser. No. 09/936,683, filed on Nov. 30, 2001, and issued as U.S. Pat. No. 6,940,098, which is the U.S. national phase of International Patent Application No. PCT/JP00/01588, which designates the U.S. and was filed on Mar. 15, 2000.
Priority Data
Mar 17, 1999 [JP] 1999-72133 Nov 26, 1999 [JP] 1999-335591 Nov 26, 1999 [JP] 1999-336421 Dec 13, 1999 [JP] 1999-353044
