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EDRAM with integrated generation and control of write enable and column latch signals and method for making same



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Patent 5835442
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Document Number
US Patent 5835442
Issued Date
November 10, 1998
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Inventors
Heisler; Dion Nickolas (Colorado Springs, CO)
Heisler; Doyle James (Colorado Springs, CO)
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Abstract
An EDRAM device includes an EDRAM memory array on a semiconductor chip. A row enable signal generator and a column address latch signal generator are provided on the same semiconductor chip for generating row enable and column address latch signals for application to the EDRAM memory array.
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EDRAM with integrated generation and control of write enable and column latch signals and method for making same - US Patent 5835442 Drawing
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Number of Claims:
13
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Owner
Enhanced Memory Systems, Inc. (Colorado Springs, CO)
Published
November 10, 1998
Application Number
08/620,450
Filed
March 22, 1996
US Classification
365/230.08   365/189.12 365/193 365/233
Int'l Classification
G06F   12/08   (20060101)   G11C   11/00   (20060101)   G11C   7/10   (20060101)  
Examiner
USPTO Field of Search
365/230.08   365/189.05   365/193   365/189.12   365/233  
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