A method of interconnecting integrated circuit chips to a substrate during the assembly of a multi-chip module. Instead of forming an electrical and physical bond by reflowing solder bumps attached to the pads of the chips and the substrate, as in flip-chip bonding, thin pads of specially selected dissimilar metals placed on the chips and substrate are connected by a solid-state diffusion bonding process. In one embodiment, the I/O pads on a chip are formed from aluminum or an aluminum alloy and are aligned and placed into physical contact with corresponding metal pads or metal layered pads on a substrate, where the metal is capable of being diffusion bonded to aluminum. The combination of chip(s) and substrate are then heated in a controlled atmosphere at a temperature and for a time sufficient to cause solid-state diffusion bonding to occur.
In a method of making electrical connections to an integrated chip, an oxide layer is formed on the surface of the chip and a substrate carrying electrical connections. The conductors on the chip are accurately aligned with the conductors on the substrate. An oxide layer formed on the surface of the chip is then fusion bonded to an oxide layer on the substrate and voids remaining between the conductors filled with a conductive material. This method removes the limitation imposed by the large pad size needed for conventional techniques.
Methods of forming arrays of electrical interconnects between substrates are provided. These methods allow the use of large interconnect bump arrays to physically and electrically connect substrates without the need to use excess pressure on the substrates to form the interconnects, thus reducing damage to the substrates. To form the interconnects, an array of bumps is formed on a first substrate from a material that forms a eutectic composition with a second material. An array of bumps composed of the second material is formed on the second substrate. The arrays are aligned and the bumps contacted at a temperature above the eutectic temperature of the eutectic composition. Each of the bumps on the first substrate melts and diffuises into the corresponding bumps on the second substrate to form the interconnects.
A method of forming packages containing SiC or other semiconductor devices bonded to other components or conductive surfaces utilizing transient liquid phase (TLP) bonding to create high temperature melting point bonds using in situ formed ternary or quaternary mixtures of conductive metals and the devices created using TLP bonds of ternary or quaternary materials. The compositions meet the conflicting requirements of an interconnect or joint that can be exposed to high temperature, and is thermally and electrically conductive, void and creep resistant, corrosion resistant, and reliable upon temperature and power cycling.
A method of manufacturing an electronic component includes bonding an electronic component via a bump to electrically and mechanically connect the electronic component to a base member and bonding a cap member to the base member in such a manner that the cap member covers the electronic component element. High temperature aging is performed after bonding the electronic component to the base member via the bump.
A device for soldering contacts on semiconductor chips. A chip is held on a chip mount by a chuck and is heated from a side facing away from the wafer by means of a radiation source, so that a solder applied to a side facing the wafer is melted. A flushing device, having a plate with a window, a gas channel, and a gas outlet opening for a forming gas, is arranged at the window, is fitted parallel to the wafer. The chip is moved vertically in relation to the wafer, pressed onto the wafer through the window, and soldered on by means of isothermal solidification.
