Thermal processing unit sections each with ten tiers and coating processing unit sections each with five tiers are disposed around a first main wafer transfer section and a second main wafer transfer section, and in the thermal processing unit section, the influence of the time required for substrate temperature regulation processing on a drop in throughput can be reduced greatly by transferring the wafer W while the temperature of the wafer W is being regulated by a temperature regulation and transfer device.
A coating and developing apparatus comprises a process block which forms a resist film on a wafer, then transfers the wafer to an exposure apparatus, and performs a developing process on the wafer after exposure, and an interface transfer mechanism provided between the process block and the exposure apparatus. The process block includes unit blocks for coating-film formation and unit blocks for development laid out in a stacked manner. When an abnormality occurs in the interface transfer mechanism, an ordinary process in the unit block for coating-film formation is performed on those substrates which are present in that unit block for coating-film formation, after which processed wafers are retreated to a retaining unit and transfer of any wafer into the unit block for coating-film formation is inhibited.
A coating and developing apparatus includes a process block which includes a unit block for coating-film formation which applies a resist, and a unit block for development which performs a developing process, and is separately provided with a coating-film-formation-unit-block transfer mechanism and a developing-process-unit-block transfer mechanism. After a substrate after exposure is transferred to a transfer stage from the interface-block transfer mechanism, the timing for the developing-process-unit-block transfer mechanism to receive the substrate is adjusted in such a way that the time from exposure of the substrate to transfer of the substrate to a heating unit becomes a preset time.
An aqueous tube cleaning apparatus and method includes a cleaning receptacle and a vertical receptacle, which is taller than the cleaning receptacle. A tube, or bundle of tubes, is placed in the cleaning receptacle, extending through an inlet port from the vertical receptacle, and a gate is closed to clamp the tubes in place. The vertical receptacle is then filled with a fluid, and the pressure created by gravity forces the fluid through and around the tubes, cleansing the inner and outer surfaces of the tubes.
An optical sensor for detecting the housing state such as the thickness of a substrate in the present invention is provided at supporting arms. The supporting arms are attached to a supporting shaft. The supporting arms are in a vertical state in a state before detection of the substrate, but when detecting, the supporting shaft rotates to bring the supporting arms into a horizontal state so that the optical sensor enters a substrate housing body and is set at a predetermined detection position. Accordingly, a space for moving the optical sensor in the horizontal direction becomes unnecessary to reduce the space required for the detecting operation and the like, making it possible to reduce the size of a substrate processing apparatus in which the detecting apparatus is incorporated.
Substrate processing parts are stacked and arranged in a multistage manner around a transport robot arranged at the center of a processing area. Rotary application units are arranged on a second layer through an indexer and the transport robot. Rotary developing units are stacked above the rotary application units respectively on a fourth layer located above the second layer. Multistage thermal processing units and an edge exposure unit are horizontally arranged in line above the indexer. In place of the processing units, inspection units performing a macro defect inspection and pattern line width measurement may be arranged in the upside region of the indexer space.