A semiconductor component comprises a pn junction in which both the p-conducting and the n-conducting layers of the pn junction are doped silicon carbide layers and the edge of at least one of the conducting layers of the pn junction exhibits a stepwise or uniformly decreasing total charge or effective surface charge density from the initial value at the defined working junction to a zero or almost zero total charge at the outermost edge of the junction following a radial direction from the cent...

A method of recovering antimony and bismuth from copper electrolyte comprises the steps of immersing a pure copper material in the copper electrolyte, so that the iron ions are reduced from Fe.sup.3+ ions to Fe.sup.2+ ions, using a mixture of dilute sulfuric acid and sodium chloride adjusting the acidity or acidic concentration, to selectively elute the bismuth and antimony wherein if the final concentration of bismuth is adjusted to be 0.02 g/l or less in the bismuth election, it is possible to...

Methods for forming pastes of dendrites particles coated with an electrically conductive coating are described. A surface is placed in contact with an electrolytic or electroless plating solution. Dendrites are formed on the surface. The dendrites are exposed to another plating solution to plate a coating on the surface of the dendrites. The coated dendrites are removed from the surface to form a powder of coated dendrites. The powder is added to a polymer material to form a paste which is heate...

The two sides of a multiple cavity mold having electroformed mold cavities for molding intraocular lenses with integral haptics are made by a preferred electroforming procedure involving the use of either a single primary master having a single cavity corresponding to the portion of the lens at either side of its median plane transverse to its optic axis if the lens to be molded is symetrical about both this transverse median plane and its longitudinal median plane containing the optic axis, or ...

An electrorefining cell permits increased electrolyte flow rates while maintaining the slime layer at the bottom of the cell and on the anode faces substantially intact. The cell includes an inlet manifold located near the bottom of the cell and having a plurality of discharge orifices for the electrolyte solution. An inlet baffle shrouds the discharge orifices to regulate and direct the flow of electrolyte solution within the cell. The inlet baffle and the cell wall form an elongated slot that ...

In order to fabricate a high performance thin film semiconductor device using a low temperature process in which it is possible to use low price glass substrates, a thin film semiconductor device has been fabricated by forming a silicon film at less than 450.degree. C., and, after crystallization, keeping the maximum processing temperature at or below 350.degree. C. In applying the present invention to the fabrication of an active matrix liquid crystal display, it is possible to both easily and ...

A method of producing a hollow electroformed product of precious metal includes the steps of forming a hollow soluble metal electroformed layer soluble in an inorganic acid on the outer surface of a master model formed of a low melting point material or a chemically soluble material soluble in a chemical, melting or dissolving and removing the master model from inside the soluble metal electroformed layer, coating the outer surface of the remaining soluble metal electroformed layer with a maskin...

A continuous strip is electrochemically processed in an electrolytic processing bath using either a thin flexible or resilient dielectric wiping blade or an open web, plastic mesh to wipe bubbles of gas from the surface, sever dendritic material, if such is present, and to remove a surface layer of partially depleted electrolytic solution, replacing with fresh solution and to stabilize strip portions extending between support rolls. The resilient dielectric wiper blade is preferably used with pe...

A metal element density is lowered in a crystalline silicon film obtained by four hour treatment at about 550.degree. C. by using a catalyst metal which accelerates crystallization. At the same time, a crystalline silicon film can be obtained which has a high crystallinity. For this purpose, extremely oxide film 13 is formed on an amorphous silicon film formed on this glass substrate in the beginning. An aqueous solution of acetate added with 10 to 200 ppm (need adjustment) of catalyst element l...

The present invention provides an improved method and apparatus for removing dissolved selenium from a wastewater solution. The apparatus treats heated selenium containing solution in a single, flow-through operation by employing both the anode chamber and cathode chamber of an electrolytic cell and a series of sub-micron filters. In operation, the present invention has proven to be very effective in treating selenium containing solution to meet or better the government toxicity characteristic s...