Doped silicon carbide structures, as well as methods associated with the same, are provided. The structures, for example, are components (e.g., layer, patterned structure) in MEMS structures. The doped silicon carbide structures may be highly conductive, thus, providing low resistance to electrical current. An in-situ doping process may be used to form the structures. The process parameters can be selected so that the structures have a low residual stress and/or low strain gradient. Thus, the st...

A GaN-based heterostructure field effect transistor capable of accomplishing higher output, higher breakdown voltage, higher speed, higher frequency, and the like. A heterostructure field effect transistor including a channel layer (4) of GaN and a barrier layer (6) of AlGaN, wherein the surface of a transistor element has an insulating film (10).

The object of the invention is to reduce the deterioration of crystallinity in the vicinity of an active layer when C, which is a p-type dopant, is doped and to suppress the diffusion of Zn, which is a p-type dopant, into an undoped active layer, thus to realize a sharp doping profile. When a Zn-doped InGaAlAs layer having favorable crystallinity is provided between a C-doped InGaAlAs upper-side guiding layer and an undoped active layer, the influence of the C-doped InGaAlAs layer whose crystall...

LED epitaxial layers (n-type, p-type, and active layers) are grown on a substrate. For each die, the n and p layers are electrically bonded to a package substrate that extends beyond the boundaries of the LED die such that the LED layers are between the package substrate and the growth substrate. The package substrate provides electrical contacts and conductors leading to solderable package connections. The growth substrate is then removed. Because the delicate LED layers were bonded to the pack...

A CMOS image sensor includes a semiconductor substrate with a first conductive type including a photodiode region and a transistor region, a gate electrode formed on the transistor region of the substrate, a first impurity region with a second conductive type formed in a portion of the semiconductor substrate between the photodiode region and the gate electrode, and a second impurity region with the second conductive type formed in the photodiode region of the semiconductor substrate.

In a III-nitride light emitting device, the device layers including the light emitting layer are grown over a template designed to reduce strain in the device, in particular in the light emitting layer. Reducing the strain in the light emitting device may improve the performance of the device. The template may expand the lattice constant in the light emitting layer over the range of lattice constants available from conventional growth templates. Strain is defined as follows: a given layer has a ...

Probe tips, methods for making probe tips, and method for using such probe trips are described. The probe tips can include a pedestal portion connected to a beam of a cantilever structure and a contact portion that can contact an electronic component that to be tested. The pedestal portion and contact portions can have a generally trapezoidal shape. The probe tips can also include a rectangular-shaped extension portion located between the base and contact portions. The probe tips can be made usi...

An active pixel using a photodiode with multiple species of N type dopants is disclosed. The pixel comprises a photodiode formed in a semiconductor substrate. The photodiode is an N.sup.- region formed within a P-type region. The N.sup.- region is formed from an implant of arsenic and an implant of phosphorus. Further, the pixel includes a transfer transistor formed between the photodiode and a floating node and selectively operative to transfer a signal from the photodiode to the floating node....

A semiconductor optical device comprises a first conductive type III-V compound semiconductor layer, a second conductive type III-V compound semiconductor layer, and an active region. The first conductive type III-V compound semiconductor layer is provided on a substrate. The second conductive type III-V compound semiconductor layer is provided on the substrate. The active region is provided between the first conductive type III-V compound semiconductor layer and the second conductive type III-V...

Light-emitting devices, and related components, systems and methods are disclosed.