A system and method for sputtering using a plurality of different bias voltages, a plurality of target-cathodes that can be powered at different voltages disposed along said path of travel, and a controller configured to selectively vary the target-cathode voltage and the pallet bias voltage while the pallet moves along the path of travel. The target-cathodes are spaced apart along the path of travel by a distance less than a length of the pallet and on both sides of the path of travel. The cont...

Prior to the start of transfer of an insulation film to a substrate, the degree of opening of a butterfly valve is set small so that evaporation of a solvent component contained in the insulation film is suppressed and the fluidity of the insulation film is ensured at the start of the transfer. On the other hand, the butterfly valve is totally opened at the start of the transfer, so that the pressure inside a thin film forming chamber rapidly decreases and transfer of the insulation film to the ...

An apparatus for fixing an eletrode of an electrode of plama polymerization apparatus is provided, which comprises; a nonconductive holder for fixing an electrode by covering an end part of the electrode, a leadline connecting the electrode with a power supply, and a fixing part fixing the holder on a chamber wall.

Methods for controlling the grain structure of a polycrystalline Si-containing film involve depositing the film in stages so that the morphology of a first film layer deposited in an initial stage favorably influences the morphology of a second film layer deposited in a later stage. In an illustrated embodiment, the initial stage includes an anneal step. In another embodiment, the later stage involves depositing the second layer under different deposition conditions than for the first layer.

In a magnetron sputtering chamber, a substrate is placed in the chamber and a deposition shield is maintained about the substrate to shield internal surfaces in the chamber. The deposition shield has a textured surface that may be formed by a hot pressing process or by a coating process, and that allows the accumulated sputtered residues to stick thereto without flaking off. An electrical power is applied to a high density sputtering target facing the substrate to form a plasma in the chamber wh...

A monomer is selected to produce a polymeric film having desirable characteristics for a particular application. The monomer is ppolymerized under controlled conditions to produce a solid oligomer having those characteristics at a molecular weight suitable for evaporation under vacuum at a temperature lower than its thermal decomposition temperature. The process of polymerization to produce the oligomer is carried out under conditions that yield a finite molecular-chain length with no residual r...

The present invention generally provides a method and apparatus for use in a physical vapor deposition chamber. In one embodiment, invention provides a shutter disk mechanism that eliminates the need for axially orientating a shutter disk to a robot blade that transfers the shutter disk to a substrate support.

An object of the invention is to provide a sputtering device which can provide increased distribution of film formation and coverage distribution better than prior sputtering devices. Thus, this invention is that, in the sputtering device constituted of a substrate holder for holding a substrate, at least one target for forming a thin film on the substrate, at least one sputtering cathode which has the target and magnets arranged behind the substrate, an axis of the target is inclined to an axis...

Plasma etching or resputtering of a layer of sputtered materials including opaque metal conductor materials may be controlled in a sputter reactor system. In one embodiment, resputtering of a sputter deposited layer is performed after material has been sputtered deposited and while additional material is being sputter deposited onto a substrate. A path positioned within a chamber of the system directs light or other radiation emitted by the plasma to a chamber window or other optical view-port w...

High-saturation magnetization composite soft magnetic films can be deposited with sintered targets made of preferably at least two kinds of powders/elements with much lower saturation magnetization than that of the deposited soft magnetic films. Such a high-saturation magnetization composite soft magnetic film can be deposited by sputtering a plurality of species from a sintered target that forms a film of a material of higher saturation magnetization than that of the species.