Method and system for pumping a hyperthermal neutral beam source is described. The pumping system enables use of the hyperthermal neutral beam source for semiconductor processing applications, such as etching processes. An embodiment is described having a neutral beam source coupled to a processing chamber through a neutralizing grid. Control is provided by separately pumping the neutral beam source and the processing chamber.

The present invention provides a particle beam accelerator for accelerating charged particles along a traveling direction of the charged particles. The invention provides a particle beam accelerator, in which the charged particle beam deflected by spiral-shaped-deflecting electromagnet 3, is accelerated by an accelerating unit 5, the charged particle beam circulating in an annular vacuum passageway of a vacuum duct 1 a plurality of times differing in orbit. And gap 9 is formed in the acceleratin...

A granular perpendicular magnetic recording medium, comprising: (a) a non-magnetic substrate having a surface; and (b) a layer stack on the substrate surface, the layer stack including a granular perpendicular magnetic recording layer formed by: (1) reactively sputtering a target comprised of a magnetic alloy in an atmosphere containing at least one ionized oxygen species derived from a source gas comprised of a compound of oxygen and at least one other non-metallic element; and (2) oxidizing an...

Methods of preparing a carbon doped oxide (CDO) layer with a low dielectric constant and low residual stress are provided. The methods involve, for instance, providing a substrate to a deposition chamber and exposing it to a chemical precursor having molecules with at least one carbon-carbon triple bond, followed by igniting and maintaining a plasma in a deposition chamber using radio frequency power having high and low frequency components or one frequency component only, and depositing the car...

Methods are provided to form a thin film reproducibly in a process for forming the thin film on the inner wall surface facing a space formed in a substrate by plasma CVD. A thin film is produced on an inner wall surface of a substrate facing a space formed in the substrate. The substrate is contained in a chamber for plasma CVD process. A gas for plasma reaction is then flown into the space and a pulse voltage is applied on the substrate without substantially applying a direct bias voltage on th...

A plasma accelerator is provided. The plasma accelerator includes a chamber having a closed top, an opened bottom and a lateral surface, a first coil section comprising a plurality of coils that are connected to one another in series and are wound around the lateral surface of the chamber in opposite directions, and a second coil section comprising a plurality of coils that are wound around the lateral surface of the chamber between coils of the first coil section in opposite directions. Accordi...

Disclosed here is a cyclotron having a beam phase selector capable of controlling phase widths of beams and improving beam permeability for increasing beam current. The cyclotron contains an acceleration voltage applying section and a beam blocking section, at least any one of the two sections has a movable structure. While a particle is passing across a gap between dee electrodes, the acceleration voltage applying section applies RF acceleration voltage to the particle, and further applies RF a...

A technique for boron implantation is disclosed. In one particular exemplary embodiment, the technique may be realized by an apparatus for boron implantation. The apparatus may comprise a reaction chamber. The apparatus may also comprise a source of pentaborane coupled to the reaction chamber, wherein the source is capable of supplying a substantially pure form of pentaborane into the reaction chamber. The apparatus may further comprise a power supply that is configured to energize the pentabora...

A method and system for depositing a film with tunable optical and etch resistant properties on a substrate by plasma-enhanced chemical vapor deposition. A chamber has a plasma source and a substrate holder coupled to a RF source. A substrate is placed on the substrate holder. The TERA layer is deposited on the substrate. The amount of RF power provided by the RF source is selected such that the rate of deposition of at least one portion of the TERA layer is greater than when no RF power is appl...

A phase switch (energy switch) comprising a three-cavity system (an end-coupled cavity+side-passed accelerate cavity+an end-coupled cavity) and a separate single couple cavity is disclosed. The phase shift between the adjacent accelerate cavities is .pi. when the three-cavities system is disordered (state `0`); and a microwave pass through the three-cavities system to the adjacent accelerate cavities, the phase between the adjacent accelerate cavities is change to 2.pi. (or 0) when the single co...