Physical barriers (210) are present between neighbouring pixels (200) on a circuit substrate (100) of an active-matrix electroluminescent display device, particularly with LEDs (25) of organic semiconductor materials. The invention forms these barriers (210) with metal or other electrically-conductive material (240) that serves as an interconnection between a first circuit element (21, 4, 5, 6, 140, 150, 160, T1, T2, Tm, Tg, Ch) of the circuit substrate and a second circuit element (400, 400s, 2...

An interactive information device for use as a touch panel, touch screen, digitizer panel, or pen-input device, and a method for making such a device includes a first, transparent, electrically conductive layer supported by the rigid substrate, a flexible, transparent substrate at least partially aligned with the rigid substrate and having a second, transparent, electrically conductive layer on a surface thereof, the second conductive layer being spaced from the first conductive layer. A plurali...

An auxiliary line including a guide layer and an auxiliary metallic member is formed with respect to a signal transmitting line or a main auxiliary capacitance line formed on a glass substrate. The guide layer is formed in the same layer where pixel electrodes are formed. The auxiliary metallic member is formed by using a method such as an inkjet method, in which fine particles of metal is ejected or dropped.

In an element for a MOS type solid-state imaging device, a leakage current caused by a stress generated in a vicinity of an element isolation region having an STI structure is reduced. The element for the MOS type solid-state imaging device comprises: a signal accumulation region 102, of a second conductivity type, provided in an interior of a semiconductor substrate or well 101 of a first conductivity type, for accumulating a signal charge generated by performing photoelectric convention; a gat...

A TFT array substrate is provided. The TFT array substrate includes a substrate, a patterned first metallic layer, a patterned semiconductor layer, a patterned transparent conductive layer, a patterned dielectric layer, and a patterned second metallic layer. Elements of each TFT of the TFT array substrate are arranged vertically, so that the TFT array substrate has relatively small fabrication area and is operable with a high conducting current. Further, the storage capacitance can be enhanced b...

A thin film transistor includes: an insulation substrate; a semiconductor layer formed on the insulation substrate including, conductive regions that includes impurity, and a channel region sandwiched between the conductive regions; an insulation layer that covers the semiconductor layer; a gate electrode that is formed on the insulator layer at a position where opposes the channel region; and a source electrode and a drain electrode connected to the conductive regions. The channel region divide...

A Thin Film Transistor (TFT) that can reduce leakage current and can prevent crosstalk between adjacent TFTs includes: a substrate; a gate electrode disposed on the substrate; a source electrode and a drain electrode separated from each other and insulated from the gate electrode; and a semiconductor layer which is insulated from the gate electrode, contacts each of the source and drain electrodes, and has grooves that separate at least a region of the semiconductor layer between the source and ...

A method of fabricating a liquid crystal display device is provided. The method of fabricating a liquid crystal display device includes forming a thin film transistor including a source electrode and a drain electrode on a substrate, forming a first passivation layer on the substrate, forming a black matrix on the first passivation layer, forming a color filter layer on the first passivation layer in the pixel region, and forming a pixel electrode above the color filter layer and the black matri...

An active matrix substrate with a high aperture ratio is provided, which is capable of preventing electrical short circuits between pixel electrodes and auxiliary capacitive electrodes. Gate lines and auxiliary capacitive electrodes are formed on an insulated substrate. The auxiliary capacitive electrodes have holes formed therethrough. To cover the gate lines and the auxiliary capacitive electrodes, a first interlayer insulating film is formed, on which source lines, a semiconductor layer, and ...

A display includes a substrate, a plurality of first and second signal lines formed on the substrate and insulated from each other, a plurality of driving voltage lines formed with a same layer as the first signal lines, at least one driving voltage connection formed with a same layer as the second signal lines, at least one connecting member electrically connecting the driving voltage lines and the driving voltage connection, at least one first thin film transistor connected to the first and se...