An encapsulated thermoelectric heat pump, apparatus and method for manufacturing the encapsulated thermoelectric heat pump is disclosed. The encapsulated thermoelectric heat pump includes a plurality of spaced n-type and p-type thermoelectric elements arranged alternatively in rows and columns. The thermoelectric elements having opposing ends operatively connected to first and second metalized ceramic substrates. The first and second metalizations patterned to connect serially the thermoelectric...

A flipchip LSI is mounted on a glass substrate through the use of bonding techniques. An insulating layer made of, for example, epoxy resin is formed between the LSI chip and the glass substrate in such a manner that the insulating layer is fixed to both of the LSI chip and the glass substrate. The insulating layer functions to absorb strain caused by differences of the coefficient of thermal expansion of the LSI chip and the glass substrate, thereby securing stable operation of the LSI chip.

Electrodes are formed on one major surface of a semiconductor chip and electrically connected to lead electrodes carried by a support substrate. A cover plate is fixed to the opposing major surface of the semiconductor chip to determine one major surface of semiconductor device. Remaining surfaces of the semiconductor chip are encapsulated by a resin mold. The cover plate comprises a flexible glass cloth impregnated with half cured epoxy resin.

A semiconductor module that densely packs integrated circuit chips to provide electronic systems or large memory modules in an array of stacked silicon boards. The semiconductor chips may be flip mounted and the back side of each chip is in thermal contact with an adjacent silicon board to provide heat conduction away from the chip.

An electronic fabrication process and structure is provided for attaching discrete passive surface mount devices (SMD) to a substrate in a single step. A liquid noflow resin encapsulant containing flux material is dispensed between presoldered pads on a substrate. The SMD, having a pair of electrical contacts, is pressed into said encapsulant so that the electrical contacts make contact with said presoldered pads. Heat is applied to first activate said flux material and then reflow the solder on...

An electronic fabrication process and structure is provided for attaching discrete passive surface mount devices (SMD) to a substrate in a single step. A liquid noflow resin encapsulant containing flux material is dispensed between presoldered pads on a substrate. The SMD, having a pair of electrical contacts, is pressed into said encapsulant so that the electrical contacts make contact with said presoldered pads. Heat is applied to first activate said flux material and then reflow the solder on...

According to the invention, there is disclosed a miniature electromechanical junction transducer, the operation of which is based on piezojunction effect. The mechanical imput coupling member, in the subject invention, as distinguished from the prior art, is formed in situ and is spread over the top of the mesa structure to form an exact duplicate of the mesa surface at the area of contact.

A dual SIP package for encapsulating a plurality of semiconductor die includes a first group of elongated metal leads each having first and second end portions, and a first group of enlarged metal pads each attached to the first end portion of one of the leads of the first group, a second group of elongated metal leads each having first and second end portions, and a second group of enlarged metal pads each attached to the first end portion of one of the leads of the second group, each of the pa...

Provided is a novolak epoxy resin having a GPC area percentage of a binuclear compound of 15% or more. Said novolak epoxy resin has a low viscosity and is useful for an electric and electronic material such as adhesives, paints, insulating materials, laminates and the like.

A semiconductor device comprising a semiconductor element encapsulated with a cured resin having at least two secondary differential peaks of linear thermal expansion by a thermomechanical analytical measurement, the interval between the peaks being at least 20.degree. C. The semiconductor device encapsulated with the cured resin does not cause a warp and is excellent in the TCT test characteristics and the cracking resistance.