Methods and apparatus for providing a resistance variable memory device with agglomeration prevention and thermal stability. According to one embodiment, a resistance variable memory device is provided having at least one tin-chalcogenide layer proximate at least one chalcogenide glass layer. The invention also relates to methods of forming such a memory device.

A microelectronic programmable structure suitable for storing information and array including the structure and methods of forming and programming the structure are disclosed. The programmable structure generally includes an ion conductor and a plurality of electrodes. Electrical properties of the structure may be altered by applying energy to the structure, and thus information may be stored using the structure.

A microelectronic programmable structure suitable for storing information, and array including the structure and methods of forming and programming the structure are disclosed. The programmable structure generally includes an ion conductor and a plurality of electrodes. Electrical properties of the structure may be altered by applying energy to the structure, and thus information may be stored using the structure.

A process is described in which planar photodiodes are formed by diffusing lead into p-type Pb.sub.0.8 Sn.sub.0.2 Te single crystal material.

An infrared sensitive photodiode which is made of an epitaxial layer of a miconductor alloy which is a lead chalcogenide, a lead-tin chalcogenide, or a lead-cadmium chalcogenide grown on a single crystal substrate of an infrared transparent, electrically insulating material, an Ohmic contact deposited on the epitaxial layer, and a non-Ohmic Pb metal contact deposited on the epitaxial layer to form a Schottky barrier, the improvement comprising the inclusion of halide ions in the interface region...

A single element infrared detector consisting of multiple layers of succeve epilayers of lead chalcogenides or their alloys with tin or cadmium to form two or more adjacent contiguous surfaces whereupon each surface is deposited with an ohmic contact. The multiple adjacent semiconductor surfaces are also each fitted or equipped with an non-ohmic contact that yields novel applications in terms of broad band and narrow scanning, particular when the epilayers are geometrically arranged to selective...

A process for preparing an infrared sensitive photodiode comprising the ss of (1) forming by vacuum deposition an epitaxial layer of a semiconductor alloy material which is PbS, PbSe, PbTe, PbS.sub.x Se.sub.1-x, PbS.sub.x Te.sub.1-x, PbSe.sub.x Te.sub.1-x, Pb.sub.y Sn.sub.1-y S, Pb.sub.y Sn.sub.1-y Se, Pb.sub.y Sn.sub.1-y Te, Pb.sub.y Sn.sub.1-y S.sub.x Se.sub.1-x, Pb.sub.y Sn.sub.1-y S.sub.x Te.sub.1-x, Pb.sub.y Sn.sub.1-y Se.sub.x Te.sub.1-x, Pb.sub.z Cd.sub.1-z S, Pb.sub.z Cd.sub.1-z Se, Pb.s...

A variable temperature method for the preparation of single and multiple taxial layers of single-phase (e.g., face-centered cubic), ternary lead chalcogenide alloys (e.g., lead cadmium sulfide, [Pb.sub.1-w Cd.sub.w ].sub.a [S].sub.1-a where w varies between zero and fifteen hundredths, inclusive, and a=0.500.+-.0.003), deposited upon substrates of barium fluoride, BaF.sub.2, maintained in near thermodynamic equilibrium with concurrently sublimated lead alloy and chalcogenide sources. During prep...

Non-volatile, resistance variable memory devices, integrated circuit elements, and methods of forming such devices are provided. According to one embodiment of a method of the invention, a memory device can be fabricated by depositing a chalcogenide material onto a first (lower) electrode, sputter depositing a thin diffusion layer of a conductive material over the chalcogenide material, diffusing metal from the diffusion layer into the chalcogenide material resulting in a metal-comprising resist...

Non-volatile, resistance variable memory devices, integrated circuit elements, and methods of forming such devices are provided. According to one embodiment of a method of the invention, a memory device can be fabricated by depositing a chalcogenide material onto a first (lower) electrode, sputter depositing a thin diffusion layer of a conductive material over the chalcogenide material, diffusing metal from the diffusion layer into the chalcogenide material resulting in a metal-comprising resist...