A thermal CVD process for forming silicon carbide-type films onto a substrate comprising the steps of: (a) introducing di-tert-butylsilane vapor into a CVD reaction zone containing said substrate on which a silicon carbide film is to be formed; (b) maintaining the temperature of said zone and said substrate at about 400.degree. C. to about 1,100.degree. C.; (c) maintaining the pressure in said zone at about 0.1 to about 10 torr; and (d) passing said vapor into contact with said substrate for a p...

A method of coating a surface of recrystallized silicon body by CVD method comprising a step of heating a feedstock gas containing a silicon source and a carbon source and said non-metallic element by a resistance heat which is generated by electrifying said non-metallic element.

A nitrogen-doped n-type SiC-formed material consisting of high purity .beta.-type crystals, which exhibits low resistivity and low light transmittance and is suitably used as a substrate for semiconductor fabricating devices, and a method of manufacturing the SiC-formed material by which the SiC-formed material is obtained at high productivity and improved deposition rate. The SiC-formed material is produced by the CVD method introducing nitrogen gas together with raw material gases and a carrie...

Silicon carbide is produced by chemical vapor deposition at temperatures from 1340.degree.-1380.degree. C., deposition chamber pressures of 180-200 torr, H.sub.2 /methyltrichlorosilane ratio of 4-10 and deposition rate of 1-2 .mu.m/min. Furthermore, H.sub.2 supplied as a part of the gas stream contains less than about 1 part per million (ppm) O.sub.2 gas, and various means are provided to exclude particulate material from the deposition chamber. The silicon carbide is polishable to <5 .ANG. R...

The present invention relates to a method for manufacturing a diamond composite from diamond particles, comprising the steps of forming a work piece, heating the work piece and controlling the heating temperature and heating time so that a certain desired amount of graphite is created by graphitization of diamond particles, thereby creating an intermediate body, and infiltrating silicon or silicon alloy into the intermediate body. The invention also relates to a diamond composite produced by thi...

A method for seasoning a process chamber is disclosed. The seasoning method includes providing a seasoning film on the interior surfaces of a process chamber, typically after cleaning of the chamber.

The embodiments of the invention relate to a MoSi.sub.2-SiC nanocomposite coating layer formed on surfaces of refractory metals such as Mo, Nb, Ta, W and their alloys. The MoSi.sub.2-SiC nanocomposite coating layer is manufactured by forming a molybdenum carbide (MoC and MoC.sub.2) coating layers on the surfaces of the substrates at high temperature, and the subsequent vapor-deposition of Si. The MoSi.sub.2-SiC nanocomposite coating layer has a microstructure in which SiC particles are mostly lo...

A corrosion-resistant member includes a substrate made of a ceramic material and having a diameter of at least 200 mm, and a film of chemically vapor deposited silicon carbide having a thickness of not less than 0.5 mm and covering at least such a portion of the surface of the substrate that is to contact a corrosive material. A process is disclosed for producing such a corrosion-resistant member, which process includes thermally treating the film at a temperature higher, by not less than 50.deg...

The conversion of carbon-carbon of a composite material at the surface to licon carbide-hybridized carbon-carbon in accordance with the method of invention is accomplished by reacting the carbon fibers and matrix with silicon monooxide at elevated temperature from about 1500.degree.-1700.degree. C. The conversion of bulk graphite or carbon-carbon composite materials is achieved in 30-60 minutes at 1700.degree. C. With conversion the density is increased from the density of carbon of 1.45 grams/c...

A process for depositing silicon carbide layers to produce highly pure silicon carbide having a stoichiometric composition and a theoretical density includes feeding a gas mixture to a heated substrate under specified conditions, separating the decomposition products into gas and liquid phases by condensation, rectifying the liquid phase and recycling recovered materials, cooling the gas phase and recovering a solid deposit, and compressing and recycling hydrogen.