This invention includes atomic layer deposition methods of forming conductive metal nitride comprising layers. In one implementation, an atomic layer deposition method of forming a conductive metal nitride comprising layer includes positioning a substrate within a deposition chamber. A first species is chemisorbed to form a first species monolayer onto the substrate from a gaseous first precursor comprising at least one of an amido metal organic compound or an imido metal organic compound. The f...

A method for controlling parasitic deposits in a deposition system for depositing a film on a substrate, the deposition system defining a reaction chamber for receiving the substrate and including a process gas in the reaction chamber and an interior surface contiguous with the reaction chamber, includes flowing a buffer gas between the interior surface and at least a portion of the process gas to form a gas barrier layer such that the gas barrier layer inhibits contact between the interior surf...

A dynamic blending gas delivery system and method are disclosed. A blended gaseous mixture produced in accordance with the method is used in chemical vapor deposition tools or similar process tools. One embodiment is a multi-step method for processing a plurality of fluids to form a blended gaseous mixture and supplying the blended gaseous mixture to a distribution header from which the blended gaseous mixture is delivered to at least one tool. The first step is to supply a first fluid. The seco...

In one embodiment of the invention, iCVD is used to form linear thin films using a radical initiator and an alkene. In another embodiment, iCVD is used to form crosslinked thin films by the addition of a crosslinking agent (e.g., a diacrylate or a dimethyacrylate). The incorporation of a crosslinking agent into the thin films is shown to increase systematically with its partial pressure. In one embodiment, when the crosslinker is EDGA and the monomer is HEMA it results in crosslinked P(HEMA-co-E...

The present invention concerns a method and an apparatus for feeding a gas phase reactant from a reactant source into a gas phase reaction chamber. In the method a reactant which is a liquid or solid at ambient temperature is vaporized from the reactant source at a vaporizing temperature; and the vaporized reactant is fed into the reaction chamber. According to the invention the reactant source and the reaction chamber are located in separate vessels which can be individually evacuated. By means...

Contamination of LPCVDBP TEOS films is reduced by preventing volatile compounds, resulting from reactions of the residue in the outlet of the furnace from reaching the deposition portion of the furnace where they would otherwise react with the deposition gases to produce chemically generated particles which contaminate the dielectric film.

A process for producing a thermal barrier coating, in which organometal complexes of zirconium and at least one stabilizing element selected from the group of the alkaline earth metals or rare earths are provided as starting substances, the starting substances are evaporated by heating and the coating gases that are generated in this manner are transported to a component to be coated, which is heated at a deposition temperature, where they are broken down so that a layer is deposited, in which p...

The present invention provides a glass optical waveguide device that comprises silica glass and is usable despite a relatively large refractive index difference between its core layer and cladding layer, and a method of manufacturing such device. This optical waveguide device includes a core layer on or over a substrate and a cladding layer that covers the core layer, wherein the core layer is made of silica glass containing an additive for raising the refractive index, and the relative refracti...

Germanium compounds suitable for use as vapor phase deposition precursors for germanium films are provided. Methods of depositing films containing germanium using such compounds are also provided. Such germanium films are particularly useful in the manufacture of electronic devices.

A chemical vapor deposition process is disclosed comprising the steps of forming liquid droplets of a liquid raw material; injecting the liquid droplets through a plate member opening placed opposite to the surface of the substrate to vaporize the liquid droplets; and supplying a reaction gas that reacts with the vaporized raw material; and depositing a thin film on the substrate.