A method of depositing a top clad layer for an optical waveguide of a planar lightwave circuit. A GeBPSG top clad layer for an optical waveguide structure of a planar lightwave circuit is fabricated such that the top clad layer comprises doped silica glass, wherein the dopant includes Ge (Germanium), P (Phosphorus), and B (Boron). In depositing a top clad layer for the optical waveguide, three separate doping gasses (e.g., GeH.sub.4, PH.sub.3, and B.sub.2H.sub.6) are added during the PECVD (plas...

A method of depositing a Group IV metal-containing film on a substrate by conveying one or more of certain Group IV organometallic compounds in a gaseous phase to a deposition reactor containing a substrate and decomposing the one or more Group IV organometallic compounds to form a film of a Group IV metal on the substrate is provided. Such Group IV metal-containing films are particularly useful in the manufacture of electronic devices.

Methods of forming depositing a ferroelectric thin film, such as PGO, by preparing a substrate with an upper surface of silicon, silicon oxide, or a high-k material, such as hafnium oxide, zirconium oxide, aluminum oxide, and lanthanum oxide, depositing an indium oxide film over the substrate, and then depositing the ferroelectric film using MOCVD.

A method of manufacturing a sensor for detecting trace or impurity gases, the method comprising evaporating tin and/or tin oxides under a partial pressure of oxygen in order to condense vapor on an electrically insulating substrate to obtain a porous layer deposit therein. The metal or the metal oxides is/are evaporated under a flow of a mixture of gases containing both oxygen and an inert gas at a total pressure of not less than 100 pascals and with the partial pressure of the oxygen in the mix...

Apparatus for the coating of glass containers has a series of vertical slots for applying coating chemicals to a hot glass jar with a minimal neck and shoulder area. An opposing horizontal slot exhausts spent coating material and reactants in a laminar flow. A center section provides a current of gas without chemicals parallel to the coating stream, and flowing with low velocity relative to the coating stream, but with high velocity relative to the extraneous turbulent and convection currents.

A method of depositing a tin oxide film onto a heated substrate is provided, by chemical vapor deposition using a tetraalkyoxy tin compound. Further provided is a method for doping the film with platinum or palladium using a .beta.-diketonate precursor thereof.

A process for coating a wide moving web with the product of chemical reactants first brought into contact at a point proximate the glass surface. The process comprises a primary distribution of reactants (across the width of the substrate) through a row of small apertures, then a segregation through a secondary passage to a reaction zone at the surface of the substrate. Reactant distribution pipes are advantageously positioned and shaped to form only a gradual increase in width of the reactant f...

The present invention provides a method of forming a thin film containing a metal oxide as the main component, the film thickness of which is relatively uniform, at a high film deposition rate over a wide area and over a long time. The present invention is a method for forming a thin film containing a metal oxide as the main component on a substrate using a mixed gas stream containing a metal chloride, an oxidizing material, and hydrogen chloride, by a thermal decomposition method at a film depo...

Improved methods of forming PZT thin films that are compatible with industry-standard chemical vapor deposition production techniques are described. These methods enable PZT thin films having thicknesses of 70 nm or less to be fabricated with high within-wafer uniformity, high throughput and at a relatively low deposition temperature. In one aspect, a source reagent solution comprising a mixture of a lead precursor, a titanium precursor and a zirconium precursor in a solvent medium is provided. ...

A novel lead zirconium titanate (PZT) material having unique properties and application for PZT thin film capacitors and ferroelectric capacitor structures, e.g., FeRAMs, employing such thin film material. The PZT material is scalable, being dimensionally scalable, pulse length scalable and/or E-field scalable in character, and is useful for ferroelectric capacitors over a wide range of thicknesses, e.g., from about 20 nanometers to about 150 nanometers, and a range of lateral dimensions extendi...